High-Temperature CVD System
CVD System for SiC (HTC3001)
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Specification
- Reactor
- Load-lock system
- Substrate size
- Substrate heating
- Max. heating temperature
- Application
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- Vertical quartz
Face down
- With transfer rod
- Φ3-inch x 1
- RF heating
- 1800℃(radiation thermometer value)
- SiC etc.
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All-In-One CVD System
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Specification
- Reactor
- Substrate size
- Substrate heating
- Max. heating temperature
- Footprint
- Application
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- Horizontal quartz
- Φ2-inch x 1
- RF heating system
- 1500℃(radiation thermometer value)
- 1.3×1.3m
- Si and SiC etc.
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High-Temperature CVD System (SH2001-HTA)
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Specification
- Reactor
- Substrate size
- Substrate heating
- Max. heating temperature
- Application
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- Horizontal stainless steel
Face down
- Φ1-inch x 1
- Resistance heating system
- 1800℃(thermocouple value for control)
- AlN etc.
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