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High-Temperature CVD System

CVD System for SiC (HTC3001)

SiC—pCVD‘•’u (HTC3001)

Specification

  • Reactor

  • Load-lock system
  • Substrate size
  • Substrate heating
  • Max. heating temperature
  • Application
  • Vertical quartz
    Face down
  • With transfer rod

  • ƒ³3-inch x 1
  • RF heating

  • 1800Ž(radiation thermometer value)
  • SiC etc.

All-In-One CVD System

ƒI[ƒ‹EƒCƒ“Eƒƒ“ECVD‘•’u

Specification

  • Reactor
  • Substrate size
  • Substrate heating
  • Max. heating temperature
  • Footprint
  • Application
  • Horizontal quartz
  • ƒ³2-inch x 1
  • RF heating system

  • 1500Ž(radiation thermometer value)
  • 1.3~1.3m
  • Si and SiC etc.

High-Temperature CVD System (SH2001-HTA)

‚‰·CVD‘•’u (SH2001-HTA)

Specification

  • Reactor

  • Substrate size
  • Substrate heating
  • Max. heating temperature
  • Application
  • Horizontal stainless steel
    Face down
  • ƒ³1-inch x 1
  • Resistance heating system

  • 1800Ž(thermocouple value for control)
  • AlN etc.
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