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Super High-Temperature Process Furnace for SiC

SiC用超高温プロセス炉

Features

  • Supports up to 6-inch
  • Capable of growing at high-temperature (Max. 2200℃)
  • Capable of producing an increase in temperature rapidly (Within 1 minute from 1000℃ to 2000℃
  • Carbon free
  • Ultra high vacuum specification (extremely low leak rate)
  • Fully automated (process, transport)

Specification

  • Soaking area
  • Max. heating temperature
  • Ultimate pressure
  • Chamber configuration
  • 160mmφ×65mmH
  • Max. 2200℃

  • 6.6×10-7Pa

  • Two-chambers (heating chamber, loading chamber)

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