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K-Cell Series

High-Temperature K Cell for Si (THKC-1000H1)

Si用高温Kセル

Features

Developed as the world’s first K cell for Si, this product can achieve high precision control (0.005–0.5Å/s)of film thickness, , which was not previously achieved by an EB gun.

Specification

  • Max. heating temperature
  • Crucible material
  • Mounting flange size
  • 1600℃
  • 4cc
  • ICF 70 or more

Sample of data(High-Temperature K Cell for Si)

Relation between Temperature of K-Cell
for Si and Growth Rate
PL Spectrum
Si用Kセル温度と成長速度の関係 PLスペクトル


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