| High temperature MOCVD system | Pressurization MOCVD system |
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| Max. Heating Temperature : 1550℃ | Max. Growth Pressure : 2atm |
| Supplied to Nagoya University Amano Laboratory | |
| Annealing system for Nitride | High Temperature MOCVD system |
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| Max. Heating Temperature : 1100℃ | Max. Heating Temperature: 1800℃ |
| Supplied to Meijo University Akasaki Laboratory | |
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