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High@temperature MOCVD system Pressurization MOCVD system
 Max. Heating Temperature : 1550Ž  Max. Growth Pressure : 2atm
 
Supplied to Nagoya University Amano Laboratory 




Annealing system for Nitride High Temperature MOCVD system
Max. Heating Temperature : 1100Ž  Max. Heating Temperature: 1800Ž
 
Supplied to Meijo University Akasaki Laboratory 

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